PART |
Description |
Maker |
F0532506Q |
3.3 V 2.5 Gb/s NRZ Data Rate Laser Diode Driver
|
EUDYNA[Eudyna Devices Inc]
|
PSI-REP-DNET-CAN |
Automatic data rate detection or fixed data rate setting via DIP switches
|
PHOENIX CONTACT
|
IDT5T9050PGI IDT5T9050 |
2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFERJR 2.5V的单数据传输速率1:5时钟缓冲器TERABUFFER⑩JR 2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFER⑩ JR 2.5V Single Data Rate 1:5 Clock Buffer Terabuffer Jr.
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
MB81N643289 MB81N643289-50 MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM
|
Fujitsu Microelectronics
|
W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
AN9614 |
Using the PRISM??Chip Set for Low Data Rate Applications Using the PRISM㈢ Chip Set for Low Data Rate Applications
|
Intersil Corporation
|
MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内 SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84 SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|